AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $ \hbox{TiO}_{2}$ as Gate Dielectric

Published 2009 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $ \hbox{TiO}_{2}$ as Gate Dielectric
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 12, Pages 2911-2916
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-11-03
DOI
10.1109/ted.2009.2032745

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.