AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study

Published 2010 View Full Article

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Title
AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 54, Issue 11, Pages 1367-1371
Publisher
Elsevier BV
Online
2010-06-04
DOI
10.1016/j.sse.2010.03.022

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