Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Published 2013 View Full Article

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Title
Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8S, Pages 08JN08
Publisher
IOP Publishing
Online
2013-05-20
DOI
10.7567/jjap.52.08jn08

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