Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

Authors

Keywords

Journal

Volume 57, Issue 11, Pages 2978-2987

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2010-09-30

DOI

10.1109/ted.2010.2071130

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