On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

Transition-metal-oxide-based resistance-change memories

(2010) S. F. Karg et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

(2010) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells

(2009) R. Soni et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integration of “GexSe1−x” in crossbar arrays for non-volatile memory applications

(2009) R. Soni et al.   MICROELECTRONIC ENGINEERING

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Crystal nucleation in glasses of phase change memory

(2008) V. G. Karpov et al.   JOURNAL OF APPLIED PHYSICS

Field-induced nucleation in phase change memory

(2008) V. G. Karpov et al.   PHYSICAL REVIEW B