Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

Statistical Analysis of the Shape of One-Dimensional Nanostructures: Determining the Coalescence Degree of Spontaneously Formed GaN Nanowires

(2014) Oliver Brandt et al.   CRYSTAL GROWTH & DESIGN

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

(2014) Marta Sobanska et al.   JOURNAL OF APPLIED PHYSICS

Misorientation defects in coalesced self-catalyzed GaN nanowires

(2013) K.A. Grossklaus et al.   JOURNAL OF CRYSTAL GROWTH

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

(2013) Sergio Fernández-Garrido et al.   NANO LETTERS

Ga-polar GaN nanocolumn arrays with semipolar faceted tips

(2013) A Urban et al.   NEW JOURNAL OF PHYSICS

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

(2013) V. Consonni   Physica Status Solidi-Rapid Research Letters

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

(2012) K. Hestroffer et al.   APPLIED PHYSICS LETTERS

Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction

(2012) Andreas Biermanns et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air

(2012) Pierre Corfdir et al.   JOURNAL OF APPLIED PHYSICS

GaN based nanorods for solid state lighting

(2012) Shunfeng Li et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

(2012) V. M. Kaganer et al.   PHYSICAL REVIEW B

Quantitative description for the growth rate of self-induced GaN nanowires

(2012) V. Consonni et al.   PHYSICAL REVIEW B

Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

(2011) V. Consonni et al.   APPLIED PHYSICS LETTERS

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

(2011) P. Lefebvre et al.   APPLIED PHYSICS LETTERS

Recent advances in semiconductor nanowire heterostructures

(2011) Jonas Johansson et al.   CRYSTENGCOMM

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Macro- and micro-strain in GaN nanowires on Si(111)

(2011) B Jenichen et al.   NANOTECHNOLOGY

Coherent X-ray nanodiffraction on single GaAs nanowires

(2011) J. Gulden et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN Nanowires Grown by Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

(2010) Katsuhiro Tomioka et al.   NANO LETTERS

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

(2010) Oliver Brandt et al.   PHYSICAL REVIEW B

All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

(2010) Ryota Ishii et al.   PHYSICAL REVIEW B

Effects of nanowire coalescence on their structural and optical properties on a local scale

(2009) V. Consonni et al.   APPLIED PHYSICS LETTERS

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

(2009) P. Corfdir et al.   JOURNAL OF APPLIED PHYSICS

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

X-ray in-plane scattering investigation of GaN nanorods

(2008) L. Horák et al.   JOURNAL OF APPLIED PHYSICS

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Control of InAs Nanowire Growth Directions on Si

(2008) Katsuhiro Tomioka et al.   NANO LETTERS

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small