High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

Published 2013 View Full Article

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Title
High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 9R, Pages 090111
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.51.090111

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