- Home
- Publications
- Publication Search
- Publication Details
Title
Surface Defects and Passivation of Ge and III–V Interfaces
Authors
Keywords
-
Journal
MRS BULLETIN
Volume 34, Issue 07, Pages 504-513
Publisher
Cambridge University Press (CUP)
Online
2011-02-02
DOI
10.1557/mrs2009.138
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels
- (2009) Yoontae Hwang et al. APPLIED PHYSICS LETTERS
- Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces
- (2009) Evgueni A. Chagarov et al. JOURNAL OF CHEMICAL PHYSICS
- Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
- (2008) Byungha Shin et al. APPLIED PHYSICS LETTERS
- Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates
- (2008) D. Shahrjerdi et al. APPLIED PHYSICS LETTERS
- Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation
- (2008) G. Pourtois et al. APPLIED PHYSICS LETTERS
- First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)
- (2008) M. Houssa et al. APPLIED PHYSICS LETTERS
- In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors
- (2008) Cheng-Wei Cheng et al. APPLIED PHYSICS LETTERS
- In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm
- (2008) S. Koveshnikov et al. APPLIED PHYSICS LETTERS
- In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
- (2008) E. O’Connor et al. APPLIED PHYSICS LETTERS
- In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As
- (2008) F. S. Aguirre-Tostado et al. APPLIED PHYSICS LETTERS
- High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
- (2008) T. D. Lin et al. APPLIED PHYSICS LETTERS
- Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces
- (2008) M. Milojevic et al. APPLIED PHYSICS LETTERS
- Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
- (2008) M. Milojevic et al. APPLIED PHYSICS LETTERS
- 1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm
- (2008) R.J.W. Hill et al. ELECTRONICS LETTERS
- Erratum for ‘1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm’
- (2008) R.J.W. Hill et al. ELECTRONICS LETTERS
- Screening of Oxide/GaAs Interfaces for MOSFET Applications
- (2008) M. Passlack et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
- (2008) Y. Xuan et al. IEEE ELECTRON DEVICE LETTERS
- Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs
- (2008) M. Passlack et al. IEEE ELECTRON DEVICE LETTERS
- Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
- (2008) G. Mavrou et al. JOURNAL OF APPLIED PHYSICS
- Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
- (2008) D. P. Brunco et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Density functional theory study of first-layer adsorption of ZrO2 and HfO2 on Ge(100)
- (2008) T.J. Grassman et al. MICROELECTRONIC ENGINEERING
- Formation mechanisms of polar and non-polar amorphous oxide–semiconductor interfaces
- (2008) Evgueni A. Chagarov et al. SURFACE SCIENCE
- Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study
- (2008) M. Houssa et al. SURFACE SCIENCE
- Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments
- (2007) F. Bellenger et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More