Surface Defects and Passivation of Ge and III–V Interfaces

Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels

(2009) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces

(2009) Evgueni A. Chagarov et al.   JOURNAL OF CHEMICAL PHYSICS

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

(2008) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation

(2008) G. Pourtois et al.   APPLIED PHYSICS LETTERS

First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors

(2008) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

(2008) T. D. Lin et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm

(2008) R.J.W. Hill et al.   ELECTRONICS LETTERS

Erratum for ‘1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm’

(2008) R.J.W. Hill et al.   ELECTRONICS LETTERS

Screening of Oxide/GaAs Interfaces for MOSFET Applications

(2008) M. Passlack et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS

Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

(2008) M. Passlack et al.   IEEE ELECTRON DEVICE LETTERS

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

(2008) G. Mavrou et al.   JOURNAL OF APPLIED PHYSICS

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Density functional theory study of first-layer adsorption of ZrO2 and HfO2 on Ge(100)

(2008) T.J. Grassman et al.   MICROELECTRONIC ENGINEERING

Formation mechanisms of polar and non-polar amorphous oxide–semiconductor interfaces

(2008) Evgueni A. Chagarov et al.   SURFACE SCIENCE

Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study

(2008) M. Houssa et al.   SURFACE SCIENCE

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY