1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μS/mm

The first demonstration of implant-free, flatband-mode In0.75Ga0.25As channel n-MOSFETs is reported. These 1 mm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm(2)/Vs and sheet carrier concentration of 3.3 x 10(12) cm(-2), utilise a Pt gate, a high-kappa dielectric (kappa similar or equal to 20), and a delta-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (I-d,I-sat) of 933 mu A/mu m, extrinsic transconductance (g(m)) of 737 mu S/mm, gate leakage (I-g) of 40 pA, and on-resistance (R-on) of 555 Omega center dot mu m. The g(m) and R-on figures of merit are the best reported to date for any III-V MOSFET.