Erratum for ‘1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm’

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Title
Erratum for ‘1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm’
Authors
Keywords
-
Journal
ELECTRONICS LETTERS
Volume 44, Issue 21, Pages 1283
Publisher
Institution of Engineering and Technology (IET)
Online
2008-10-11
DOI
10.1049/el:20082747

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