Electrical characteristics of ZrO2/GaAs MOS capacitor fabricated by atomic layer deposition

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

(2012) Susanne Stemmer et al.   APPLIED PHYSICS LETTERS

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

(2012) Jun Wu et al.   APPLIED PHYSICS LETTERS

Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

(2011) Soo Min Hwang et al.   APPLIED PHYSICS LETTERS

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)

(2011) Evgueni A. Chagarov et al.   JOURNAL OF CHEMICAL PHYSICS

Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices

(2011) J. H. Yum et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effect of pulsed deposition of Al2O3 for native oxides reduction of GaAs by atomic layer deposition technique

(2011) R. B. Konda et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Monocliniclike local atomic structure in amorphous ZrO2 thin film

(2010) Deok-Yong Cho et al.   APPLIED PHYSICS LETTERS

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

(2010) Rahul Suri et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

(2010) Yi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Reduction of native oxides on GaAs during atomic layer growth of Al2O3

(2009) Hang Dong Lee et al.   APPLIED PHYSICS LETTERS

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

(2009) Y. Q. Wu et al.   IEEE ELECTRON DEVICE LETTERS

Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers

(2009) W. Weinreich et al.   JOURNAL OF APPLIED PHYSICS

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

(2009) L. Lamagna et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

(2008) Yung-Hsien Wu et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate

(2008) Chao-Ching Cheng et al.   JOURNAL OF APPLIED PHYSICS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A