Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate

Title
Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 7, Pages 074102
Publisher
AIP Publishing
Online
2008-04-03
DOI
10.1063/1.2901167

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