Article
Nanoscience & Nanotechnology
Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Summary: This study aims to improve the emission efficiency of GaInN-based green LEDs using pre-TMIn flow treatment of quantum wells. The investigation shows that this treatment effectively deactivates and neutralizes surface defects, leading to improved emission intensity. Through the analysis of prepared samples, it is demonstrated that the pre-TMIn flow treatment of quantum wells effectively suppresses surface defect incorporation, thereby enhancing emission intensity.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Crystallography
A. Maassdorf, D. Martin, H. Wenzel, A. Knigge, M. Weyers
Summary: This study focuses on achieving laser emission around 700 nm by using GaxIn1_xAsyP1_y material. By controlling the strain and thickness of the material, compressively strained GaxIn1_xAsyP1_y quantum wells with the desired wavelength have been successfully grown, and high power laser output has been achieved.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Chemistry, Multidisciplinary
Marcel S. Claro, Juan P. Martinez-Pastor, Alejandro Molina-Sanchez, Khalil El Hajraoui, Justyna Grzonka, Hamid Pashaei Adl, David Fuertes Marron, Paulo J. Ferreira, Oleksandr Bondarchuk, Sascha Sadewasser
Summary: Bandgap engineering and quantum confinement in semiconductor heterostructures allow for fine-tuning of material response to electromagnetic fields and light. However, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge. This study demonstrates the successful van der Waals epitaxy of 2D GaSe and InSe heterostructures on silicon and sapphire substrates with different lattice parameters. The GaSe/InSe heteroepitaxy enables the growth of quantum wells and superlattices with photoluminescence and absorption related to interband transitions.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Ilya Shashkin, Nikita Pikhtin
Summary: In this study, we used the selective-area-epitaxy technique to fabricate and study samples of semiconductor heterostructures that contain highly strained InGaAs quantum wells. The composition and emission wavelength of the quantum wells varied across the window due to the curvature profile of the growth surface. Increasing the curvature profile led to a transition in the photoluminescence wavelength distribution profile.
Article
Chemistry, Physical
Maykon Alves Lemes, Jose Antnio do Nascimento Neto, Freddy Fernandes Guimaraes, Lauro June Queiroz Maia, Ricardo Costa de Santana, Felipe Terra Martins
Summary: A cadmium coordination polymer able to convert UV radiation into blue light with high efficiency was studied, and a new blue-light emitter based on its structure with Mn2+ was prepared but did not achieve expected efficiency. The high-efficiency brightness of the literature compound was found to be related to the d(10) closed-shell of cadmium.
JOURNAL OF MOLECULAR STRUCTURE
(2021)
Article
Materials Science, Multidisciplinary
Abdul Mannan, Filchito Renee G. Bagsican, Kota Yamahara, Iwao Kawayama, Hironaru Murakami, Heiko Bremers, Uwe Rossow, Andreas Hangleiter, Dmitry Turchinovich, Masayoshi Tonouchi
Summary: THz emission spectroscopy and microscopy were used to investigate electron and lattice dynamics of Ga0.8In0.2N/GaN MQWs, revealing strong dependence of optical responses on quantum well width and photon energies. The temporal separation between the first and third THz pulses can be used to determine the thickness of the GaN capping layer in the MQW structure with high precision.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Elisa M. Sala, Max Godsland, Aristotelis Trapalis, Jon Heffernan
Summary: By utilizing capping layer engineering, the size and shape of InAs quantum dots can be controlled, allowing for tuning of the emission wavelength across a broad range. Experimental results were verified optically and morphologically through various detection methods.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Engineering, Electrical & Electronic
C. Himwas, S. Kijamnajsuk, V Yordsri, C. Thanachayanont, T. Wongpinij, C. Euaruksakul, S. Panyakeow, S. Kanjanachuchai
Summary: Quaternary alloy GaAsPBi has attractive optical properties and can be grown lattice-matched to GaAs. Using standard solid-source MBE, GaAsPBi films and MQWs were successfully grown lattice-matched to GaAs, demonstrating luminescence and strong localizations at room temperature. The emission efficiency of GaAsPBi MQWs was found to be higher than their non-QW counterparts, highlighting the benefits of carrier confinements by quantum wells.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Shin-Ichiro Gozu
Summary: This study investigates and compares InSb layers on Ge and GaAs substrates, focusing on their crystalline and photoluminescence properties. By controlling the polarity of InSb and using a misoriented substrate, the crystalline quality of the InSb layer is improved. The presence of a tilted substrate enhances the crystalline quality of the InSb layer, except in one case.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
Thorsten Schultz, Max Kneiss, Philipp Storm, Daniel Splith, Holger von Wenckstern, Christoph T. Koch, Adnan Hammud, Marius Grundmann, Norbert Koch
Summary: In this study, it is found through simulations that the detection wavelength range of GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs), which are currently state-of-the-art, can be substantially improved using kappa-([Al,In](x)Ga1-x)(2)O-3, while being transparent to visible light and insensitive to photon noise due to its wide band gap. It is also demonstrated that the efficiency of QWIPs critically depends on the quantum well thickness, making precise control and determination of the thickness essential.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Dong Han, Wen-Qi Wei, Ming Ming, Zihao Wang, Ting Wang, Jian-Jun Zhang
Summary: In recent years, there has been a strong demand for GaSb-on-Si direct heteroepitaxy to expand the operating wavelength range to mid-infrared and high-mobility applications. However, the growth of high-quality GaSb films on Si is challenging due to the generation of high-density defects. In this study, we proposed a novel design and growth strategy to achieve the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD) through the use of a V-grooved Si hollow structure and InGaSb/GaSb dislocation filtering layers. The reported results greatly improve the overall quality of epitaxial Si-based antimonide, benefiting various devices and critical applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Multidisciplinary Sciences
Tanjin He, Haoyan Huo, Christopher J. Bartel, Zheren Wang, Kevin Cruse, Gerbrand Ceder
Summary: By text-mining 29,900 solid-state synthesis recipes from the scientific literature, we established a knowledge base that enables the recommendation of precursor materials for the synthesis of a novel target material. Our data-driven approach learns the chemical similarity of materials and mimics human synthesis design, achieving a success rate of at least 82% when proposing precursor sets for unseen test target materials.
Article
Optics
Haixing Meng, Bing Chen, Wenjuan Zhu, Zijian Zhou, Tianxiang Jiang, Xiuwen Xu, Shujuan Liu, Qiang Zhao
Summary: Researchers have successfully prepared a zero-dimensional organic-inorganic hybrid halide crystal, C50H44P2SbCl5, with a facile antisolvent precipitation method. The crystal exhibits strong yellow broadband emission and near-unity photoluminescence quantum yield. It also demonstrates excellent environmental stability, irradiation stability, linear response to X-ray dose rates, and high light yield, surpassing commercial inorganic scintillators.
LASER & PHOTONICS REVIEWS
(2023)
Article
Materials Science, Multidisciplinary
Kezhia Thomas, Vinay Parol, P. Karuppasamy, Muthu Senthil Pandian, P. Ramsamy, A. N. Prabhu
Summary: In this study, the effects of gamma irradiation on the structural and optical properties of 2-aminopyridinium 4nitrophenolate 4-nitrophenol (2AP4N) were investigated. The results showed that irradiation led to changes in the crystal structure and optical properties, while the second harmonic generation (SHG) efficiency remained unaffected.
CURRENT APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Megan O. Hill, Paul Schmiedeke, Chunyi Huang, Siddharth Maddali, Xiaobing Hu, Stephan O. Hruszkewycz, Jonathan J. Finley, Gregor Koblmueller, Lincoln J. Lauhon
Summary: This study successfully correlates the morphology, strain, defects, and emission characteristics of quantum wells in nanowires under specific geometries using 3D Bragg coherent diffraction imaging technique, revealing the limits of elastic strain accommodation.
Article
Physics, Applied
Bowen Sheng, Frank Bertram, Xiantong Zheng, Ping Wang, Gordon Schmidt, Peter Veit, Juergen Blaesing, Zhaoying Chen, Andre Strittmatter, Juergen Christen, Bo Shen, Xinqiang Wang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Marcus Mueller, Frank Bertram, Peter Veit, Bernhard Loitsch, Julia Winnerl, Sonja Matich, Jonathan J. Finley, Gregor Koblmueller, Juergen Christen
APPLIED PHYSICS LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Hendrik Spende, Christoph Margenfeld, Tobias Meyer, Irene Manglano Clavero, Heiko Bremers, Andreas Hangleiter, Michael Seibt, Andreas Waag, Andrey Bakin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2020)
Article
Optics
Bowen Sheng, Gordon Schmidt, Frank Bertram, Peter Veit, Yixin Wang, Tao Wang, Xin Rong, Zhaoying Chen, Ping Wang, Juergen Blasing, Hideto Miyake, Hongwei Li, Shiping Guo, Zhixin Qin, Andre Strittmatter, Bo Shen, Juergen Christen, Xinqiang Wang
PHOTONICS RESEARCH
(2020)
Article
Physics, Applied
F. Liu, X. Rong, Y. Yu, T. Wang, B. W. Sheng, J. Q. Wei, S. F. Liu, J. J. Yang, F. Bertram, F. J. Xu, X. L. Yang, Z. H. Zhang, Z. X. Qin, Y. T. Zhang, B. Shen, X. Q. Wang
APPLIED PHYSICS LETTERS
(2020)
Article
Physics, Applied
Bowen Sheng, Frank Bertram, Gordon Schmidt, Peter Veit, Marcus Mueller, Ping Wang, Xiaoxiao Sun, Zhixin Qin, Bo Shen, Xinqiang Wang, Juergen Christen
APPLIED PHYSICS LETTERS
(2020)
Article
Materials Science, Multidisciplinary
Abdul Mannan, Filchito Renee G. Bagsican, Kota Yamahara, Iwao Kawayama, Hironaru Murakami, Heiko Bremers, Uwe Rossow, Andreas Hangleiter, Dmitry Turchinovich, Masayoshi Tonouchi
Summary: THz emission spectroscopy and microscopy were used to investigate electron and lattice dynamics of Ga0.8In0.2N/GaN MQWs, revealing strong dependence of optical responses on quantum well width and photon energies. The temporal separation between the first and third THz pulses can be used to determine the thickness of the GaN capping layer in the MQW structure with high precision.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Physics, Applied
Philipp Henning, Shawutijiang Sidikejiang, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Andreas Hangleiter
Summary: The study confirms the 100% internal quantum efficiency of III-N quantum wells at low temperatures through time-resolved photoluminescence measurements. It suggests that when radiative recombination dominates, the low-temperature IQE of a quantum well is 100%. By examining temperature-dependent measurements, the presence of nonradiative recombination in quantum wells at low temperature can be determined, enabling absolute IQE measurements.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Condensed Matter
Uwe Rossow, Shawutijiang Sidikejiang, Samar Hagag, Philipp Horenburg, Philipp Henning, Rodrigo de Vasconcellos Lourenco, Heiko Bremers, Andreas Hangleiter
Summary: The text discusses the growth of InxGa1-xN/GaN quantum well structures on the N-face of GaN, forming pyramids through wet chemical etching and potentially enabling nanooptical light emitters. The presence of InxGa1-xN quantum dot-like structures in the pyramids is confirmed through transmission electron microscopy and observed narrow emission lines in photoluminescence. The etching process depends on various factors such as electrolyte composition, defects at the surface, and surface morphology, requiring better control for reproducible nanostructures.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Shawutijiang Sidikejiang, Philipp Henning, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Dirk Menzel, Andreas Hangleiter
Summary: This study compares the low-temperature photoluminescence intensities of different GaInN/GaN quantum well structures and finds that certain efficient samples reach saturation in internal quantum efficiency at low temperature. By using the low-temperature PL efficiency as a reference, the study also observes the effects of temperature-independent non-radiative losses on the low-temperature IQE and is able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, the experimental results are proven by intentionally introducing structural defects into a sample with initial 100% IQE.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Lai Wang, Xun Wang, Frank Bertram, Bowen Sheng, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Gordon Schmidt, Peter Veit, Jurgen Christen, Xinqiang Wang
Summary: This study reports color-tunable InGaN/GaN multi-quantum-well light-emitting diodes based on GaN microfacet structure, with emission wavelength and intensity tunable by injection current. The EL behavior is attributed to locally different facets of the complex 3D structure, while a programmable power supply is designed to drive the LED and achieve specific color tuning. Furthermore, white LEDs with high CRI up to 96.1 and CCT between 4000 and 10000K are achieved.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Philipp Henning, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Andreas Hangleiter
