Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3427310
Keywords
crystal orientation; gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; plasma deposition; polar semiconductors; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors
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Funding
- European Commission [STREP 224212]
- French National Research Agency Project COSNI [ANR-08-BLAN-0298-01]
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We report on the growth kinetics of semipolar (11-22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN surface, and the limits of this growth window in terms of substrate temperature and In flux lie at same values for both polar and semipolar material. However, in semipolar samples, the incorporation of In is inhibited, even for growth temperatures within the Ga-limited regime of polar InGaN growth. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427310]
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