Article
Nanoscience & Nanotechnology
Munetaka Arita, Taichi Iki, Mark J. Holmes, Yasuhiko Arakawa
Summary: This study reports the discovery and characterization of single-photon-emitting carrier localization centers spontaneously formed along misfit dislocations in AlGaN. The emitters exhibit extremely narrow linewidths and record-low inhomogeneous broadening. These experimental results are expected to pave the way for improving the performance of III-nitride low-dimensional nanostructure-based quantum emitters.
Article
Chemistry, Multidisciplinary
Eamonn T. Hughes, Mario Dumont, Yingtao Hu, Di Liang, Raymond G. Beausoleil, John E. Bowers, Kunal Mukherjee
Summary: A process has been developed for regrowing thick III-As layers on a thin GaAs template on Si, with a focus on controlling threading dislocation formation. The use of compressively strained dislocation blocking layers leads to a significant reduction in threading dislocation densities by as much as 30x.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Chemistry, Multidisciplinary
Thomas Riedl, Vinay S. Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter, Joerg K. N. Lindner
Summary: The size-dependent strain relaxation behavior in InAs quantum dots on GaAs(111)A nanopillars has been studied experimentally and theoretically. The experiment reveals a coherent state for small dimensions and misfit dislocations for larger sizes. The analysis suggests a gradual transition between purely elastic and plastic relaxation regimes.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
P. V. Seredin, N. S. Buylov, D. L. Goloshchapov, S. A. Ivkov, E. P. Matyukhina, I. N. Arsentyev, A. V. Nashchekin, Sh. Sh. Sharofidinov, A. M. Mizerov, E. V. Pirogov, M. S. Sobolev
Summary: In this study, we investigated the effects of a non-polar m-plane sapphire substrate on the properties of HVPE growth and the characteristics of the GaN epitaxial film. We successfully obtained high-quality semipolar GaN samples on the m-sapphire substrate and determined their structural and optical properties. The optimization of the technological methodology may present a promising approach for the growth of high-quality GaN structures on large area m-sapphire substrates.
Article
Multidisciplinary Sciences
Ilya Svetlizky, Seongsoo Kim, David A. Weitz, Frans Spaepen
Summary: This study uses colloidal crystals to investigate the interactions and evolution of dislocations during plastic deformation, providing insights into the macroscopic deformation and atomic-scale dislocation dynamics of materials.
NATURE COMMUNICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Malik Durand, Jonathan Cormier, Fabien Paumier, Shyam Katnagallu, Aparna Saksena, Paraskevas Kontis, Florence Pettinari-Sturmel, Muriel Hantcherli, Jean-Michel Franchet, Christian Dumont, Nathalie Bozzolo
Summary: The present study aims to understand the mechanisms of macroscopic contraction in gamma/gamma' nickel based superalloys during isothermal annealing. The study characterized AD730 (TM) alloy samples using various methods and found that chemical composition changes during annealing led to a decrease in lattice parameters and resulted in macroscopic volume contraction.
Review
Engineering, Electrical & Electronic
Meixin Feng, Jianxun Liu, Qian Sun, Hui Yang
Summary: This article discusses the challenges and solutions in the direct growth of high-quality III-nitride semiconductor laser materials on Si substrates, as well as the recent progress and further development prospects.
PROGRESS IN QUANTUM ELECTRONICS
(2021)
Article
Physics, Applied
Naveen Aruchamy, Tony Schenk, Stephanie Girod, Sebastjan Glinsek, Emmanuel Defay, Torsten Granzow
Summary: Solution-deposited ferroelectric films are affected by mechanical stress, and the choice of substrate material plays a crucial role in the ferroelectric response. The study found that the polarization direction and intensity of ferroelectric thin films change under different stress conditions.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Manali Nandy, Agnieszka Paszuk, Markus Feifel, Christian Koppka, Peter Kleinschmidt, Frank Dimroth, Thomas Hannappel
Summary: The study demonstrates the use of high-quality virtual substrates, such as GaP/AlP pulsed nucleation layers, to improve the crystalline quality and reduce crystal defects in III-V multilayer structures grown on Si(100) wafers, ultimately enhancing device performance.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Physical
Fabi Zhang, Jin Zhang, Lijie Huang, Shangfeng Liu, Wei Luo, Junjie Kang, Zhiwen Liang, Jiakang Cao, Chenhui Zhang, Qi Wang, Ye Yuan
Summary: In this study, epitaxial semipolar (11-22) AlN was successfully prepared on nonpolar m-sapphire substrate using sputtering and high-temperature annealing. The evolution of crystalline structure and morphology was investigated by measurements and analysis, showing that annealing improved the crystalline quality. The influence of AlN-sapphire interface on crystalline quality and lattice parameters during annealing was found to be less significant with increasing film thickness. The annealing duration had no effect on crystalline quality but had a noticeable impact on morphology, indicating that crystalline reorganization occurs before morphology reset. The zig-zag morphology of the AlN template along the sapphire [0001] direction, resulting from annealing, could affect the subsequent device epitaxy process.
Article
Physics, Applied
M. E. Twigg, G. G. Jernigan
Summary: Research indicates that in heteroepitaxial semiconductor films, thinner and mechanically stiffer blocking layers are more effective in reducing the Peach-Koehler force, thereby preventing dislocation generation.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Eveline Postelnicu, Rui-Tao Wen, Danhao Ma, Baoming Wang, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling
Summary: Heterogeneous integration of diverse materials structures is critical to the scaling of electronic and photonic integrated circuits. The roles of lattice misfit and thermal expansion misfit in determining the residual strain in as-grown and annealed heteroepitaxial films are experimentally examined using Ge-on-Si as a model system. The study reveals the formation of misfit dislocations and proposes a comprehensive model for the conversion of compressive misfit strain to tensile elastic strain. Different temperature regimes exhibit different mechanisms for strain relief.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Boris Yanachkov, Lyudmil Lyutov, Ivaylo Katzarov, Ludmil Drenchev, Krasimir Kolev
Summary: In this study, the effect of two different microstructures in pure iron on the dislocation mobility in hydrogen-charged and non-charged samples was investigated. Stress-relaxation tests and TEM analysis were conducted to determine the activation volume and dislocation structures formed during stress relaxation. A self-consistent kinetic Monte-Carlo (SCkMC) model was used to investigate the mobility and behavior of the dominant mobile dislocation in Fe under different stresses and H concentrations. The results showed that the presence of H affected the deviation from the primary slip plane and the formation of kink-pairs in the secondary planes at different stress levels and H concentrations. An explanation for the formation of dislocation cell structures in pure and hydrogen-charged Fe in the cold-rolled and annealed samples was proposed based on the results of stress-relaxation tests and SCkMC simulations.
Article
Physics, Condensed Matter
A. M. Smirnov, A. Kremleva, Sh Sh Sharofidinov, V. E. Bugrov, A. E. Romanov
Summary: A theoretical model for misfit stress relaxation in film/substrate alpha-Ga2O3/alpha-Al2O3 heterostructures with lattice anisotropy is proposed. The nucleation of misfit dislocations due to basal or prismatic slip in heterostructures with different film orientations is considered. The dependencies of critical thickness on the angle between the polar c-axis and the normal to the film growth plane are obtained for alpha-Ga2O3/alpha-Al2O3 heterostructures.
PHYSICS OF THE SOLID STATE
(2021)
Article
Materials Science, Multidisciplinary
Brian B. Haidet, Jarod Meyer, Pooja Reddy, Eamonn T. Hughes, Kunal Mukherjee
Summary: PbSe and related IV-VI rocksalt-structure semiconductors have electronic properties controlled by strain and interfaces, making them suitable for IV-VI/III-V hybrid heterostructures. Defects mediate lattice mismatch in epitaxial PbSe thin films and III-V templates, leading to strain relief mechanisms such as dislocations and patches at the interfaces. The diverse range of strain-relaxation mechanisms available in PbSe makes it convenient for epitaxial integration in hybrid heterostructures.
PHYSICAL REVIEW MATERIALS
(2023)
Article
Physics, Condensed Matter
Mylene Sauty, Natalia Alyabyeva, Cheyenne Lynsky, Yi Chao Chow, Shuji Nakamura, James S. Speck, Yves Lassailly, Alistair C. H. Rowe, Claude Weisbuch, Jacques Peretti
Summary: In this study, scanning tunneling electroluminescence microscopy was used to investigate the unique radiative recombination properties near a defect in an InGaN/GaN quantum well. The results revealed intense emission peaks at higher energies close to the defect edges, which were not visible in the macrophotoluminescence spectrum. The quantitative information obtained from fitting the local tunneling electroluminescence spectra provided important insights into carrier localization in the quantum well.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2023)
Article
Physics, Applied
Feng Wu, Jacob Ewing, Cheyenne Lynsky, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Summary: In this article, the authors used advanced characterization techniques to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs. They identified two types of V-defects, one that promotes hole injection and one that is believed to be deleterious to high-efficiency LEDs.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Matthew S. Wong, Aditya Raj, Hsun-Ming Chang, Vincent Rienzi, Feng Wu, Jacob J. Ewing, Emily S. Trageser, Stephen Gee, Nathan C. Palmquist, Philip Chan, Ji Hun Kang, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars
Summary: The electrical performance of III-nitride blue micro-light-emitting diodes (mu LEDs) with different tunnel junction (TJ) architectures grown by metalorganic chemical vapor deposition is investigated. The introduction of AlGaN layer above the n-side of the TJ layer improves the current density-voltage characteristic and the effects of AlGaN/GaN superlattices are examined. The band diagram simulation shows that a net positive polarization charge is formed at the AlGaN/GaN interface, leading to a reduction in tunneling distance and an increase in tunneling probability. Additionally, the proposed AlGaN-enhanced TJ design significantly enhances the wall-plug efficiency of mu LEDs.
Article
Physics, Applied
Panpan Li, Hongjian Li, Yunxuan Yang, Matthew S. Wong, Mike Iza, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Summary: This article presents high-performance 10 x 10 μm InGaN amber micro-size LEDs. At 15 A cm(-2), the InGaN micro LEDs exhibit a single emission peak at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency are 5.5% and 3.2%, respectively. Compared to the 100 x 100 μm InGaN red micro LEDs, the 10 x 10 μm InGaN red micro LEDs maintain a similar EQE value with the same efficiency droop. These results highlight the higher efficiency potential of InGaN materials compared to common AlInGaP materials for the ultra-small size red micro LEDs required by augmented reality and virtual reality displays.
APPLIED PHYSICS EXPRESS
(2023)
Article
Physics, Applied
Wan Ying Ho, Yi Chao Chow, Shuji Nakamura, Jacques Peretti, Claude Weisbuch, James S. Speck
Summary: Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n(-)-n(+) junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 x 10(19) cm(-3). By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L-e = 2663 nm. The measured value is in good agreement with literature reported values. The extrapolated electron current at the n(-) region p-GaN interface is in reasonable agreement with the simulated electron current at the interface.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Fikadu Alema, Takeki Itoh, William Brand, Andrei Osinsky, James S. Speck
Summary: We investigated the controllable nitrogen doping of beta-Ga2O3 using ammonia diluted in nitrogen as a source of active nitrogen. The study looked at the effects of flow rate and substrate temperature on the doping efficiency and reproducibility. By increasing the flow rate of NH3/N-2, the nitrogen impurities incorporated into beta-Ga2O3 increased linearly. The presence of hydrogen in the film accompanied the nitrogen doping at low substrate temperatures.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Summary: Efficiency droop at high current densities is a common problem for InGaN-based LEDs, especially for conventional c-plane devices. This study introduces a method to reduce the internal electric fields in c-plane quantum wells by using doped barriers, which allows for a thick active region design and leads to improved LED performance.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Optics
J. Mickevic, E. Valkiunaite, Z. Podlipskas, K. Nomeika, S. Nargelas, G. Tamulaitis, Y. C. Chow, S. Nakamura, J. S. Speck, C. Weisbuch, R. Aleksieju
Summary: The dynamics of two distinct bands in non-polar m-plane InGaN/GaN multiple quantum wells (MQWs) were investigated using PL, CL, and DT spectroscopy. The shift in peak emission wavelength with increasing excitation was caused by competition between these bands. DT measurements attributed the high-energy PL band to optical transitions between ground QW states, while the low-energy PL band was associated with recombination of localized carriers. CL measurements confirmed the dispersion of deep localized states and suggested small-scale disorder. PL measurements showed that localized states are highly sensitive to indium content and structural parameters. Temperature-dependent PL studies revealed strong carrier-phonon interaction.
JOURNAL OF LUMINESCENCE
(2023)
Article
Crystallography
Vineeta R. Muthuraj, Wenjian Liu, Henry Collins, Weiyi Li, Robert Hamwey, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller
Summary: The electrical properties of InN make it a promising candidate for III-nitride electronic devices. One-dimensional InN quantum wire-like structures were grown on miscut substrates using N-polar MOCVD growth to mitigate the high lattice mismatch with GaN. The optimal growth conditions for quantum wire segment formation were determined by varying the InN growth temperature, thickness, and NH3 flow during growth. Anisotropic electrical conduction was observed in the N-polar InN wire-like samples.
Article
Psychology, Developmental
Erin P. Vaughan, Julianne S. Speck, Paul J. Frick, Toni M. Walker, Emily L. Robertson, James V. Ray, Tina D. Wall Myers, Laura C. Thornton, Laurence Steinberg, Elizabeth Cauffman
Summary: Research on proactive and reactive aggression in adolescents and young adults found that these two types of aggression have unique developmental trajectories and distinct covariates. Proactive aggression was influenced by callous-unemotional traits, while reactive aggression was predicted by impulsivity. These findings highlight the importance of considering the specific factors associated with each type of aggression in understanding and addressing aggressive behaviors.
DEVELOPMENT AND PSYCHOPATHOLOGY
(2023)
Article
Physics, Applied
Wan Ying Ho, Cameron W. Johnson, Tanay Tak, Mylene Sauty, Yi Chao Chow, Shuji Nakamura, Andreas Schmid, Jacques Peretti, Claude Weisbuch, James S. Speck
Summary: In this study, the lateral distribution of the junction current in an electrical biased p-n GaN diode was measured using electron emission microscopy with a low-energy electron microscope. The vacuum level on the diode surface was reduced by cesium deposition to achieve negative electron affinity, allowing emitted overflow electrons on the biased diode surface to be imaged for their spatial distribution. The obtained results were compared with Joyce and Wemple's analytical solutions [J. Appl. Phys. 41, 3818 (1970)] and showed a good match.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Wan Ying Ho, Abdullah I. Alhassan, Cheyenne Lynsky, Yi Chao Chow, Daniel J. Myers, Steven P. DenBaars, Shuji Nakamura, Jacques Peretti, Claude Weisbuch, James S. Speck
Summary: Using electron emission spectroscopy, researchers measured and analyzed the energy distribution of vacuum emitted electrons from electrically driven InGaN/GaN green light emitting diodes (LEDs) with and without a prewell superlattice (SL). They discovered a high-energy upper valley peak at approximately 1.7 eV above the I' valley in samples without a prewell SL, which is attributed to trap-assisted Auger recombination (TAAR). The absence of this peak in the sample with a prewell SL suggests the gettering of unidentified impurities that act as TAAR centers.
Article
Physics, Applied
Saulius Marcinkevicius, Jacob Ewing, Rinat Yapparov, Feng Wu, Shuji Nakamura, James S. Speck
Summary: Hole injection through V-defect sidewalls into all quantum wells can increase the efficiency of long wavelength GaN light emitting diodes, allowing for population of all wells in a multiple QW structure.
APPLIED PHYSICS LETTERS
(2023)