Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy

(2012) J.R. Lang et al.   JOURNAL OF CRYSTAL GROWTH

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements

(2011) Erin C. Young et al.   Applied Physics Express

High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes

(2011) R. M. Farrell et al.   APPLIED PHYSICS LETTERS

Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

(2011) Alexey E. Romanov et al.   JOURNAL OF APPLIED PHYSICS

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

(2010) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

(2010) A. Das et al.   APPLIED PHYSICS LETTERS

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

(2010) Chih-Teng Liao et al.   JOURNAL OF APPLIED PHYSICS

Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

(2010) Holger Jönen et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate

(2009) You-Da Lin et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation

(2009) John E. Northrup   APPLIED PHYSICS LETTERS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS