p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

Published 2010 View Full Article

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Title
p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 22, Pages 222113
Publisher
AIP Publishing
Online
2010-12-02
DOI
10.1063/1.3521388
References
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