Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Interactions between tri-methylaluminum molecules and their effect on the reaction of tri-methylaluminum with an OH-terminated Si (001) surface

(2011) Dae-Hee Kim et al.   APPLIED SURFACE SCIENCE

Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

(2011) Joon Sung Lee et al.   JOURNAL OF CHEMICAL PHYSICS

Mechanisms for the Trimethylaluminum Reaction in Aluminum Oxide Atomic Layer Deposition on Sulfur Passivated Germanium

(2011) Annelies Delabie et al.   Journal of Physical Chemistry C

Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium

(2011) S. Sioncke et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic layer deposition of Al2O3 on S-passivated Ge

(2011) S. Sioncke et al.   MICROELECTRONIC ENGINEERING

Surface Defects and Passivation of Ge and III–V Interfaces

(2011) Michel Houssa et al.   MRS BULLETIN

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

(2011) Robert M. Wallace et al.   MRS BULLETIN

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

(2010) Jonathon B. Clemens et al.   JOURNAL OF CHEMICAL PHYSICS

Theoretical Study of Atomic Layer Deposition Reaction Mechanism and Kinetics for Aluminum Oxide Formation at Graphene Nanoribbon Open Edges

(2010) Kun Xu et al.   Journal of Physical Chemistry C

Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

(2009) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Atomic Layer Deposition of Al2O3on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

(2009) Shi Yu et al.   CHINESE PHYSICS LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Study of the Surface Reactions in ALD Hafnium Aluminates

(2009) L. Nyns et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

(2009) Evgueni A. Chagarov et al.   SURFACE SCIENCE

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(100) surfaces: A comparative study by density functional theory

(2008) Jie Ren et al.   APPLIED SURFACE SCIENCE

Reference-free X-ray spectrometry based on metrology using synchrotron radiation

(2008) Burkhard Beckhoff   JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

HfO[sub 2] Atomic Layer Deposition Using HfCl[sub 4]∕H[sub 2]O: The First Reaction Cycle

(2008) L. Nyns et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY