Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
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Title
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 7, Pages 073505
Publisher
AIP Publishing
Online
2014-08-21
DOI
10.1063/1.4893605
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Related references
Note: Only part of the references are listed.- Towards forming-free resistive switching in oxygen engineered HfO2−x
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