First principles study on InP (001)-(2 × 4) surface oxidation

Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study

(2013) K. Xiong et al.   APPLIED PHYSICS LETTERS

Oxidation of the GaAs(001) surface: Insights from first-principles calculations

(2012) Marco Scarrozza et al.   PHYSICAL REVIEW B

Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al$_{2}$O$_{3}$ on Chemically Treated InP Surfaces

(2011) Barry Brennan et al.   Applied Physics Express

Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

(2011) R. V. Galatage et al.   APPLIED PHYSICS LETTERS

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

(2011) Hock-Chun Chin et al.   IEEE ELECTRON DEVICE LETTERS

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

(2011) M. P. J. Punkkinen et al.   PHYSICAL REVIEW B

First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

(2010) Weichao Wang et al.   JOURNAL OF APPLIED PHYSICS

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

(2010) Weichao Wang et al.   Journal of Physical Chemistry C

Interface states model for III–V oxide interfaces

(2009) J. Robertson   MICROELECTRONIC ENGINEERING

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

(2008) Hyoung-Sub Kim et al.   APPLIED PHYSICS LETTERS