Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1558-1560Publisher
ELSEVIER
DOI: 10.1016/j.mee.2009.03.053
Keywords
GaAs; FET; Fermi level pinning; Interface state passivation
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A general model of the density of inter-face states at III-V oxide interfaces is presented. The interface states arise from the native defects, such as Ga or As dangling bonds and Ga-Ga or As-As like-atom bonds created by oxidation. As-As bonds are a likely cause of states at the conduction band edge of GaAs. The model explains the difficulty of n-type operation for GaAs FETs compared to GaAs pFETs or to InGaAs n FETs. (C) 2009 Elsevier B.V. All rights reserved.
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