Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 2, Pages 146-148Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2091672
Keywords
FinFET; high mobility; InGaAs; MOSFET; multiple-gate field-effect transistor (MuGFET); retrograde well
Categories
Funding
- National Research Foundation, Singapore [NRF-RF2008-09]
- Defence Science and Technology Agency, Singapore [POD0713909]
Ask authors/readers for more resources
We report an In0.7Ga0.3As n-channel multiplegate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the In0.7Ga0.3As n-MuGFETs as compared with planar In0.7Ga0.3As MOSFETs. The In0.7Ga0.3As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 mu A/mu m at V-DS = 1.5 V and V-GS - V-T = 3 V.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available