Switching of nanosized filaments in NiO by conductive atomic force microscopy
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Title
Switching of nanosized filaments in NiO by conductive atomic force microscopy
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 6, Pages 064310
Publisher
AIP Publishing
Online
2012-09-21
DOI
10.1063/1.4752032
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- (2010) John Paul Strachan et al. ADVANCED MATERIALS
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