Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

(2011) Bed Nidhi Pantha et al.   Applied Physics Express

Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN

(2011) Sameer Chhajed et al.   APPLIED PHYSICS LETTERS

Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces

(2011) Seoung-Hwan Park et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

(2011) Xiao-Hang Li et al.   IEEE Photonics Journal

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

(2011) Guangyu Liu et al.   Nanoscale Research Letters

On ternary nitride substrates for visible semiconductor light-emitters

(2010) T. K. Sharma et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Design Strategies for InGaN-Based Green Lasers

(2010) Anusha Venkatachalam et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

(2010) Chih-Teng Liao et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

(2010) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

(2009) T. Shioda et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency

(2009) Taeil Jung et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

(2009) Jonathan J. Wierer et al.   Nature Photonics

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

(2008) K. McGroddy et al.   APPLIED PHYSICS LETTERS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS