Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Published 2009 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages 042901
Publisher
AIP Publishing
Online
2009-01-27
DOI
10.1063/1.3075954

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.