Electronic properties of transition-metal dichalcogenides

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

(2014) Thomas Heine   ACCOUNTS OF CHEMICAL RESEARCH

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Low-Frequency Noise in Bilayer MoS2 Transistor

(2014) Xuejun Xie et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Field-Effect Transistors Built from All Two-Dimensional Material Components

(2014) Tania Roy et al.   ACS Nano

Two Dimensional Materials Beyond MoS2: Noble-Transition-Metal Dichalcogenides

(2014) Pere Miró et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Transition-metal dichalcogenides for spintronic applications

(2014) Nourdine Zibouche et al.   ANNALEN DER PHYSIK

Separation of interlayer resistance in multilayer MoS2 field-effect transistors

(2014) Junhong Na et al.   APPLIED PHYSICS LETTERS

An atlas of two-dimensional materials

(2014) Pere Miró et al.   CHEMICAL SOCIETY REVIEWS

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Mono- and Bilayer WS2 Light-Emitting Transistors

(2014) Sanghyun Jo et al.   NANO LETTERS

MoS2 Transistors Operating at Gigahertz Frequencies

(2014) Daria Krasnozhon et al.   NANO LETTERS

Is MoS2a robust material for 2D electronics?

(2014) Tommy Lorenz et al.   NANOTECHNOLOGY

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Electron transport in MoWSeS monolayers in the presence of an external electric field

(2014) Nourdine Zibouche et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Defect-induced conductivity anisotropy in MoS2monolayers

(2014) Mahdi Ghorbani-Asl et al.   PHYSICAL REVIEW B

Transition-metal dichalcogenide bilayers: Switching materials for spintronic and valleytronic applications

(2014) Nourdine Zibouche et al.   PHYSICAL REVIEW B

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Spontaneous Ripple Formation in MoS2Monolayers: Electronic Structure and Transport Effects

(2013) Pere Miró et al.   ADVANCED MATERIALS

Single-Layer MoS2Mechanical Resonators

(2013) Andres Castellanos-Gomez et al.   ADVANCED MATERIALS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

(2013) Sina Najmaei et al.   NATURE MATERIALS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides

(2013) M. Ghorbani-Asl et al.   PHYSICAL REVIEW B

Mobility enhancement and temperature dependence in top-gated single-layer MoS2

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

(2013) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Small-signal amplifier based on single-layer MoS2

(2012) Branimir Radisavljevic et al.   APPLIED PHYSICS LETTERS

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

(2012) Hee Sung Lee et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Superconducting Dome in a Gate-Tuned Band Insulator

(2012) J. T. Ye et al.   SCIENCE

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ripples and Layers in Ultrathin MoS2Membranes

(2011) Jacopo Brivio et al.   NANO LETTERS

Visibility of dichalcogenide nanolayers

(2011) M M Benameur et al.   NANOTECHNOLOGY

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Nobel Lecture: Graphene: Materials in the Flatland

(2011) K. S. Novoselov   REVIEWS OF MODERN PHYSICS

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

(2010) Fengnian Xia et al.   NANO LETTERS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Direct observation of a widely tunable bandgap in bilayer graphene

(2009) Yuanbo Zhang et al.   NATURE

Electric field effect on superconductivity in atomically thin flakes ofNbSe2

(2009) Neal E. Staley et al.   PHYSICAL REVIEW B