Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM Cells

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

(2012) Jung-Kyu Lee et al.   APPLIED PHYSICS LETTERS

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

(2012) Thomas Bertaud et al.   APPLIED PHYSICS LETTERS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

(2011) Marc Bocquet et al.   APPLIED PHYSICS LETTERS

Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime

(2011) N. Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistance switching for RRAM applications

(2011) Frederick T. Chen et al.   Science China-Information Sciences

Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering

(2010) Lijie Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS