Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

Si–InAs heterojunction Esaki tunnel diodes with high current densities

(2010) M. T. Björk et al.   APPLIED PHYSICS LETTERS

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

(2010) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

(2010) Siyuranga O. Koswatta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

(2010) Mathieu Luisier et al.   JOURNAL OF APPLIED PHYSICS

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

(2009) S. Poli et al.   IEEE ELECTRON DEVICE LETTERS

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS

Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits

(2009) Yasin Khatami et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

(2009) Siyuranga O. Koswatta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation

(2009) Saurabh Mookerjea et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method

(2009) Mincheol Shin   JOURNAL OF APPLIED PHYSICS

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

Nanometer Device Scaling in Subthreshold Logic and SRAM

(2008) Scott Hanson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

(2008) Stefano Poli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

(2008) Stefano Poli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

(2008) Marco Lenzi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES