期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 8, 页码 2085-2092出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2200253
关键词
InAs; k center dot p; nanowires; non-equilibrium Green's functions; strain; Tunnel-FET
资金
- French ANR under the QUASANOVA project
- CINECA award under the ISCRA initiative
This paper investigates the electrical performance improvements induced by appropriate strain conditions in n-type InAs nanowire tunnel FETs in the context of a systematic comparison with strained silicon MOSFETs. To this purpose, we exploited a 3-D simulator based on an eight-band k center dot p Hamiltonian within the nonequilibrium Green function formalism. Our model accounts for arbitrary crystal orientations and describes the strain implicitly by a modification of the band structure. The effect of acoustic- and optical-phonon scattering is also accounted for in the self-consistent Born approximation. Our results show that appropriate strain conditions in n-type InAs tunnel FETs induce a remarkable enhancement of I-on with a small degradation of the subthreshold slope, as well as large improvements in the I-off versus I-on tradeoff for low I-off and V-DD values. Hence, an important widening of the range of I-off and V-DD values where tunnel FETs can compete with strained silicon MOSFETs is obtained.
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