Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Published 2009 View Full Article

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Title
Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 602-604
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-05-27
DOI
10.1109/led.2009.2020442

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