On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

Published 2010 View Full Article

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Title
On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 12, Pages 3222-3230
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-11-10
DOI
10.1109/ted.2010.2079250

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