Persistent photoconductivity in Hf–In–Zn–O thin film transistors

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

(2010) Khashayar Ghaffarzadeh et al.   APPLIED PHYSICS LETTERS

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination

(2009) Dharam Pal Gosain et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Optical and electrical properties of amorphous InGaZnO

(2009) Norihiko Yamaguchi et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

“Hump” characteristics and edge effects in polysilicon thin film transistors

(2008) A. Valletta et al.   JOURNAL OF APPLIED PHYSICS

Low-Power Low-Cost Voltage-Programmed a-Si:H AMOLED Display for Portable Devices

(2008) G.R. Chaji et al.   Journal of Display Technology

Disorder and instability processes in amorphous conducting oxides

(2008) John Robertson   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS