Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 9, Pages 1248-1250Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2160835
Keywords
Amorphous InGaZnO (a-IGZO); generation-recombination (G-R) current; subgap donorlike density of states (DOS); thin-film transistor (TFT)
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Funding
- Kookmin University (Korea)
- Ministry of Education, Science and Technology under the NRF [2009-0080344]
- National Research Foundation of Korea [2009-0080344] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A physics-based generation-recombination current (IG-R) spectroscopy is proposed for the extraction of the subgap donorlike density of states (DOS) of amorphous InGaZnO thin-film transistors. Physics-based Shockley-Read-Hall recombination through the subgap DOS over the bandgap is fully considered, and the potential for the carrier concentration is calculated through the DeAOTS model. The extracted parameters for the exponential deep donorlike states are N-DD = 5.5 x 10(21) [cm(-3) . eV(-1)] and kT(DD) = 0.115 [eV].
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