Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
出版年份 2011 全文链接
标题
Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 98, Issue 12, Pages 122110
出版商
AIP Publishing
发表日期
2011-03-26
DOI
10.1063/1.3571448
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
- (2010) Byungki Ryu et al. APPLIED PHYSICS LETTERS
- Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
- (2010) Shinhyuk Yang et al. APPLIED PHYSICS LETTERS
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
- (2010) Himchan Oh et al. APPLIED PHYSICS LETTERS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
- (2010) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
- (2010) Jang-Yeon Kwon et al. APPLIED PHYSICS LETTERS
- High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
- (2010) Shinhyuk Yang et al. IEEE ELECTRON DEVICE LETTERS
- Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
- (2010) Kwang Hwan Ji et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors
- (2010) Myung-Gil Kim et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
- (2009) Jaeseob Lee et al. APPLIED PHYSICS LETTERS
- Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
- (2009) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
- (2009) Kwang-Hee Lee et al. APPLIED PHYSICS LETTERS
- Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
- (2009) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer
- (2009) Hyun-Sik Seo et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
- (2009) Jae-Heon Shin et al. ETRI JOURNAL
- Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
- (2009) Tze-Ching Fung et al. Journal of Display Technology
- 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors
- (2009) Jae Kyeong Jeong et al. Journal of the Society for Information Display
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started