Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

标题
Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 96, Issue 21, Pages 213511
出版商
AIP Publishing
发表日期
2010-05-29
DOI
10.1063/1.3432445

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