Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

标题
Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 12, Pages 1404-1406
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-10-08
DOI
10.1109/led.2010.2073439

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