Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

标题
Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer
作者
关键词
-
出版物
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 9, Pages H348
出版商
The Electrochemical Society
发表日期
2009-07-16
DOI
10.1149/1.3168522

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