Article
Engineering, Electrical & Electronic
Wanpeng Zhao, Ning Zhang, Chong Yao, Junfeng Zhang, Tianfeng Huang, Yang Liu, Shurong Dong, Zhi Ye, Jikui Luo
Summary: A new method is proposed to improve the stability performance of zinc oxide (ZnO) thin-film transistors (TFTs) by reducing density of oxygen vacancies and enlarging valance band offset (VBO) between channel/insulator simultaneously. The stability is improved by using ozone (O-3) as oxidant during the atomic layer deposition (ALD) of ZnO to reduce its oxygen vacancies and replacing Al2O3 layer by SiO2 to obtain larger VBO. The combination of O-3 ALD ZnO and SiAlOX dielectric leads to high saturation mobility, negligible hysteresis window, and excellent stability under various stresses, especially under NBIS.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Na Xiao, Saravanan Yuvaraja, Dhanu Chettri, Zhiyuan Liu, Yi Lu, Chehao Liao, Xiao Tang, Xiaohang Li
Summary: Annealing under different atmospheres can improve the electrical performance of indium oxide thin-film transistors by modifying the density of oxygen vacancies and hydroxyl/carbonate groups. The annealed thin-film transistors exhibit high field-effect mobility, high on/off current ratio, and controlled threshold voltage.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Arqum Ali, Md. Mobaidul Islam, Jinbaek Bae, Jin Jang
Summary: Spray pyrolysis is used to fabricate high-performance and crystalline InGaZnO thin-film transistors (TFTs) with excellent stability. The TFTs exhibit high saturation mobility, low subthreshold swing, and high on/off drain current ratio at a growth temperature of 425 degrees C. The dense c-IGZO structure formed by spray pyrolysis contributes to the remarkable performance.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Ravindra Naik Bukke, Narendra Naik Mude, Jinbaek Bae, Jin Jang
Summary: Thin-film transistor (TFT) is an essential device for driving the next level of digital transformation in future electronics. This study focuses on the systematic study of amorphous gallium oxide (a-Ga2O3) and its application in nanocrystalline zinc oxide (ZnO) TFTs, demonstrating improved mobility and stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Zhipeng Gong, Zunxian Yang, Zihong Shen, Yinglin Qiu, Lei Xu, Bingqing Ye, Yuliang Ye, Wenbo Wu, Yuanqing Zhou, Qiaocan Huang, Zeqian Hong, Zongyi Meng, Zhiwei Zeng, Zhiming Cheng, Songwei Ye, Hongyi Hong, Qianting Lan, Fushan Li, Tailiang Guo, Shaohao Wang, Sheng Xu
Summary: Due to their unique properties, transparent metal oxide semiconductors have become the most attractive alternatives to silicon-based semiconductors. This study developed a bilayer transistor composed of ZnO nanoparticles/SnO2, which showed excellent performance and environmental stability. Compared with indium-based metal oxide transistors, the bilayer ZnO nanoparticles/SnO2 transistor has lower cost and great potential for low-cost thin-film electronic devices.
Article
Engineering, Electrical & Electronic
Sanath Kumar Honnali, Vikram Srinivasa Raghavan, Roopa Ashwath, Ganapathy Saravanavel, K. R. Gunasekhar, Sanjiv Sambandan, Sai Siva Gorthi, Benjamin O'Driscoll, David Jenkins
Summary: In this study, a multiplexed detection platform using zinc oxide thin-film transistors (TFTs) was demonstrated for the detection of lead and Escherichia coli in water. The functionalized TFTs showed good sensitivity and specificity to the targets, with the ability to integrate with high-density sensor arrays.
IEEE SENSORS JOURNAL
(2022)
Review
Engineering, Manufacturing
Hye-Mi Kim, Dong-Gyu Kim, Yoon-Seo Kim, Minseok Kim, Jin-Seong Park
Summary: This article provides an overview of the history and importance of ALD-based oxide semiconductors, discusses the advantages of ALD in oxide semiconductor deposition, and explains the challenges of scaling oxide semiconductors and ALD for industrial applications.
INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING
(2023)
Article
Nanoscience & Nanotechnology
Ju-Hyeon Lee, Jung-Min Park, Yu Jung Park, Jung Hwa Seo, Han-Ki Kim
Summary: In this study, TiN was used as a carrier suppressor in an amorphous InZnO channel to achieve stable channels for TFTs and LETs. TiN doping effectively reduced the number of oxygen vacancies in the InZnO channel and decreased excess electrons. The TiN-doped InZnO channel exhibited an amorphous structure and improved stability. Additionally, TiN doping in the InZnO channel enhanced the intensity of LET devices by preventing exciton quenching caused by oxygen vacancies.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Ning Zhang, Wanpeng Zhao, Chong Yao, Junfeng Zhang, Tianfeng Huang, Shurong Dong, Jikui Luo, Yang Liu, Zhi Ye
Summary: A simple compatible process based on atomic layer deposition was developed to fabricate NAND flash memory and driving logic circuits simultaneously using zinc oxide thin film transistors (ZnO TFTs), with both the active layer and the floating gate layer being made of ZnO thin films. The fabricated flash memory exhibited excellent properties such as a large memory window, long retention performance, and the ability to write and read multi-level data (2 bits). Furthermore, a 1 x 4 NAND flash array was designed and tested to confirm its storage function, and a novel modulated enhancement/flash (E/F) inverter was proposed and used in the logic circuits. Lastly, a fully transparent flash system incorporating NAND memory cell and driving logic circuits was successfully realized, showing great potential for application in 3D integrated circuits, transparent or flexible electronics.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Weiwei Shi, Lizhi Hu, Yuan Liu, Sunbin Deng, Yuming Xu, Hoi-Sing Kwok, Rongsheng Chen
Summary: This paper presents general logic cell and module designs in basic digital signal processing for transparent, flexible chips and wearable electronics. Modified circuits based on n-type-only indium tin oxide stabilized ZnO thin-film transistors process are proposed to improve circuit performance. The circuits demonstrate smaller area with relatively moderate-high performance, promising building blocks for transparent flexible DSP electronics with low-speed requirements.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Engineering, Electrical & Electronic
Hui Yang, Weiguang Yang, Jinbao Su, Xiqing Zhang
Summary: The research investigated the optical properties of amorphous Phosphorus-doped Indium-Zinc-Tin-Oxide (aIZTO:P) thin films and their potential as the channel layer for thin film transistors (TFTs). Results showed promising electrical performance and stability of a-IZTO:P TFT, demonstrating its suitability for practical applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Umu Hanifah, Juan Paolo S. Bermundo, Hidenori Kawanishi, Magdaleno R. Vasquez, Mark D. Ilasin, Yukiharu Uraoka
Summary: This study demonstrates that argon plasma treatment is an effective method for achieving fully solution-processed amorphous indium zinc oxide (a-IZO) TFTs with high stability and performance. The treatment activates the electrode and induces TFT switching, leading to improved electrical performance and stability. The results show the potential of plasma treatment for future low-temperature flexible device applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Yue Zhang, Shu-Man Zhao, Qi-Wen Su, Jun-Li Xu
Summary: Nanoflower-like ZnO-C3N4 thin film with a porous net structure was successfully synthesized by a simple chemical corrosion method, exhibiting excellent photocatalytic degradation of methyl orange, especially in acidic media.
Article
Engineering, Electrical & Electronic
Jingdong Liu, Hua Xu, Min Li, Miao Xu, Junbiao Peng
Summary: This study investigates the enhanced negative-bias-illumination-temperature stress stability (NBITS) of indium-zinc-oxide thin-film transistors (IZO TFTs) with terbium (Tb) doping. The Tb-doped IZO TFTs show improved stability compared to the pristine device (AVth decreased from -4.1 to -0.6V after NBITS). Hall measurements, X-ray photoelectron spectroscopy, and microwave photoconductivity decay were used to analyze the effect of Tb doping on the characteristics of metal-oxide-semiconductor films. It is suggested that Tb-induced shallow defects act as recombination centers for capturing photo-generated electrons, complementing the trap-assisted model. The optimized Tb content is determined to be 3.21 at.%, with a mobility of 20.0 cm^2/V.s, ION/IOFF ratio of 10^9, and NBITS of -0.8V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yushen Hu, Tengteng Lei, Yuqi Wang, Fei Wang, Man Wong
Summary: This study constructs an artificial neural network using in-memory computation, integrating thin-film transistors in an array of capacitors, incorporating both storage and computational elements, and demonstrating the feasibility of classifying specific Tetris patterns.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
