7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

标题
7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 2, Pages 165-168
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-12-23
DOI
10.1109/led.2015.2511026

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