Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

出版年份 2014 全文链接

标题

作者

关键词

AlGaN/GaN heterostructure field-effect transistor (HFET), Dynamic on-resistance; Current collapse

出版物

Volume 9, Issue 1, Pages 474

出版商

Springer Nature

发表日期

2014-09-08

DOI

10.1186/1556-276x-9-474

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