6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 36, Issue 4, Pages 381-383

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-02-19

DOI

10.1109/led.2015.2401736

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