Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNxas Gate Dielectric

标题
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNxas Gate Dielectric
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 3, Pages 824-831
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-02-01
DOI
10.1109/ted.2017.2654358

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