Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

(2016) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

(2015) Guoming Wang et al.   APPLIED PHYSICS LETTERS

Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

(2015) Yang-Shun Fan et al.   IEEE ELECTRON DEVICE LETTERS

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Crystal micromorphologies and forming voltage effect on resistance switching behaviors in Ti/Pr(Sr 0.1 Ca 0.9 ) 2 Mn 2 O 7 /Pt devices

(2015) Yuchen Sun et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

(2015) Sungjun Kim et al.   SOLID-STATE ELECTRONICS

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

(2014) Hee Woong Shin et al.   Applied Physics Express

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

(2014) Hongtao Liu et al.   IEEE ELECTRON DEVICE LETTERS

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

(2014) Xiaofan Jiang et al.   JOURNAL OF APPLIED PHYSICS

Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

Forming-free bipolar resistive switching in nonstoichiometric ceria films

(2014) Muhammad Ismail et al.   Nanoscale Research Letters

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

(2013) Tz-yi Liu et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma

(2013) Wun-Cheng Luo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

(2013) Amit Prakash et al.   Nanoscale Research Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture

(2012) Ming-Chi Wu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

(2012) Chung-Nan Peng et al.   Nanoscale Research Letters

Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy

(2011) Chenxin Zhu et al.   APPLIED PHYSICS LETTERS

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

(2011) Debashis Panda et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

(2010) Sungho Kim et al.   APPLIED PHYSICS LETTERS

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

Memory grows up

(2010) Agostino Pirovano et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electronic structure of memory traps in silicon nitride

(2009) V.A. Gritsenko et al.   MICROELECTRONIC ENGINEERING

Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications

(2008) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

(2008) T. Harada et al.   APPLIED PHYSICS LETTERS