Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

出版年份 2015 全文链接

标题

作者

关键词

Si, 3, N, 4, -based RRAM, Resistive switching, Abrupt reset, Gradual reset, Multi-level cell (MLC), Space-charge-limited current (SCLC)

出版物

Volume 114, Issue -, Pages 94-97

出版商

Elsevier BV

发表日期

2015-09-07

DOI

10.1016/j.sse.2015.08.003

联系作者

Discuss science. Find collaborators. Network.

Join a conversation

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started