期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 11, 期 1, 页码 51-55出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2011.2132142
关键词
Nonvolatile memory; resistive switching memory; nickel nanocrystals (Ni-NCs); TiO2
类别
资金
- FIR
- Defence Research & Development Organisation, Government of India
- Council of Scientific and Industrial Research (CSIR), Government of India
Nickel nanocrystal (Ni-NC)-embedded titanium dioxide films have been deposited for nonvolatile resistive switching memory devices. The polycrystalline behavior of the films has been observed from the X-ray diffraction spectra. Tiny isolated Ni-NCs with an average size of 4 nm are observed for the 1000 degrees C, 5-min annealed samples. Stable, bipolar, nonvolatile, and bistable resistive switching states are observed for the optimized annealed Ni-NC-embedded devices with a low SET and RESET voltage of 0.8 and -0.2V, respectively. A high resistance ratio (>10(3)), good stability, and retention properties are observed for the nanocrystal sample. The role of thin Ni-NC layer on memory switching stability is discussed.
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