Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

标题
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
作者
关键词
-
出版物
Nanoscale Research Letters
Volume 8, Issue 1, Pages 288
出版商
Springer Nature
发表日期
2013-06-17
DOI
10.1186/1556-276x-8-288

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