Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

标题
Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method
作者
关键词
RRAM, Transparent RRAM, Oxygen-doped ZrN films
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 675, Issue -, Pages 183-186
出版商
Elsevier BV
发表日期
2016-03-19
DOI
10.1016/j.jallcom.2016.03.122

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