标题
HfAlO-based ferroelectric memristors for artificial synaptic plasticity
作者
关键词
-
出版物
Frontiers of Physics
Volume 18, Issue 6, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2023-09-20
DOI
10.1007/s11467-023-1310-6
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Effect of capping layer on the ferroelectricity of hafnium oxide
- (2022) Jui-Hsuan Chang et al. THIN SOLID FILMS
- HfZrO x -Based Switchable Diode for Logic-in-Memory Applications
- (2021) Ruei-Wen Kao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process
- (2021) Seunghyun Kim et al. Metals
- Emerging 2D Memory Devices for In‐Memory Computing
- (2021) Lei Yin et al. ADVANCED MATERIALS
- Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films
- (2021) Hei Man Yau et al. MATERIALS CHARACTERIZATION
- Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode
- (2021) Khaled Humood et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Conductance quantization control and neuromorphic properties in Pt-nanoparticle incorporated HfAlOx alloy memristor
- (2021) Chandreswar Mahata et al. APPLIED PHYSICS LETTERS
- Memristor with a ferroelectric HfO2 layer: In which case it is a ferroelectric tunnel junction
- (2020) Vitalii Mikheev et al. NANOTECHNOLOGY
- Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes
- (2020) Yankun Wang et al. NANOTECHNOLOGY
- Two-Dimensional Unipolar Memristors with Logic and Memory Functions
- (2020) Lei Yin et al. NANO LETTERS
- Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application
- (2020) Tian-Yu Wang et al. NANO LETTERS
- Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure
- (2020) Junhyeok Choi et al. Coatings
- Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
- (2020) Tianqi Yu et al. Science China-Materials
- Partially Oxidized MXene Ti 3 C 2 T x Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics
- (2020) Andrey Sokolov et al. Advanced Electronic Materials
- Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2
- (2019) Tingting Miao et al. Nanoscale Research Letters
- Artificial electronic synapse characteristics of a Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device on flexible stainless steel substrate
- (2018) Xiaobing Yan et al. APPLIED PHYSICS LETTERS
- 3D memory matrix based on a composite memristor-diode crossbar for a neuromorphic processor
- (2018) Alexander Pisarev et al. MICROELECTRONIC ENGINEERING
- HfO 2 -based resistive switching memory with CNTs electrode for high density storage
- (2017) W.K. Cheng et al. SOLID-STATE ELECTRONICS
- Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
- (2016) Zhen Fan et al. APPLIED PHYSICS LETTERS
- Synaptic potentiation and depression in Al:HfO2-based memristor
- (2015) E. Covi et al. MICROELECTRONIC ENGINEERING
- Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
- (2015) Zedong Xu et al. Scientific Reports
- Functional ferroelectric tunnel junctions on silicon
- (2015) Rui Guo et al. Scientific Reports
- Controlling Resistance Switching Polarities of Epitaxial BaTiO3Films by Mediation of Ferroelectricity and Oxygen Vacancies
- (2015) Ming Li et al. Advanced Electronic Materials
- Overview of the SpiNNaker System Architecture
- (2012) Steve B. Furber et al. IEEE TRANSACTIONS ON COMPUTERS
- Mechanism of the Switchable Photovoltaic Effect in Ferroelectric BiFeO3
- (2011) H. T. Yi et al. ADVANCED MATERIALS
- Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- An overview of resistive random access memory devices
- (2011) YingTao Li et al. CHINESE SCIENCE BULLETIN
- Optimized fabrication of high-quality La0.67Sr0.33MnO3thin films considering all essential characteristics
- (2011) H Boschker et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices
- (2009) Carlo Cagli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Charge of the heavy brigade
- (2008) Victor V. Zhirnov et al. Nature Nanotechnology
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now