Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
出版年份 2015 全文链接
标题
Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
作者
关键词
-
出版物
Scientific Reports
Volume 5, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-05-18
DOI
10.1038/srep10409
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
- (2014) S. Gao et al. APPLIED PHYSICS LETTERS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Ferroelectric polarization reversal via successive ferroelastic transitions
- (2014) Ruijuan Xu et al. NATURE MATERIALS
- Ferroelectric tunnel junctions for information storage and processing
- (2014) Vincent Garcia et al. Nature Communications
- Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices
- (2013) Shibing Long et al. IEEE ELECTRON DEVICE LETTERS
- Nanobatteries in redox-based resistive switches require extension of memristor theory
- (2013) I. Valov et al. Nature Communications
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure
- (2012) Vishal Thakare et al. APPLIED PHYSICS LETTERS
- Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
- (2012) Shuang Gao et al. Journal of Physical Chemistry C
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films
- (2011) Daniel Pantel et al. ACS Nano
- Crossbar Logic Using Bipolar and Complementary Resistive Switches
- (2011) R. Rosezin et al. IEEE ELECTRON DEVICE LETTERS
- $\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application
- (2010) Qingyun Zuo et al. IEEE ELECTRON DEVICE LETTERS
- Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films
- (2010) L.W. Martin et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
- (2009) Qi Liu et al. APPLIED PHYSICS LETTERS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
- (2008) Sung Hyun Jo et al. NANO LETTERS
- Programmable Resistance Switching in Nanoscale Two-Terminal Devices
- (2008) Sung Hyun Jo et al. NANO LETTERS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started